[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - On-state and short circuit behaviour of high voltage trench gate IGBTs in comparison with planar IGBTs

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