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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode
Wu, E., Sune, J., Wing Lai,, Vayshenker, A., Harmon, D.Year:
2005
Language:
english
DOI:
10.1109/IEDM.2005.1609361
File:
PDF, 411 KB
english, 2005