![](/img/cover-not-exists.png)
[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - ΩFETs transistors with tin metal gate and HfO/sub 2/ down to 10nm
Jahan, C., Faynot, O., Casse, M., Ritzenthaler, R., Brevard, L., Tosti, L., Garros, X., Vizioz, C., Allain, F., Papon, A.M., Dansas, H., Martin, F., Vinet, M., Guillaumot, B., Toffoli, A., Giffard, B.Year:
2005
Language:
english
DOI:
10.1109/.2005.1469233
File:
PDF, 413 KB
english, 2005