High-yield of memory elements from carbon nanotube...

New Journal of Physics 2008 / 10 Vol. 10; Iss. 10

High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

Rinkiö, Marcus, Johansson, Andreas, Zavodchikova, Marina Y, Toppari, J Jussi, Nasibulin, Albert G, Kauppinen, Esko I, Törmä, Päivi
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Volume:
10
Language:
english
Journal:
New Journal of Physics
DOI:
10.1088/1367-2630/10/10/103019
Date:
October, 2008
File:
PDF, 1.47 MB
english, 2008
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