Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes
Ivanov, P. A., Ilâinskaya, N. D., Potapov, A. S., Samsonova, T. P., Afanasâev, A. V., Ilâin, V. A.Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613010132
Date:
January, 2013
File:
PDF, 188 KB
english, 2013