[Inst. Electr. Eng. Japan 13th International Symposium on...

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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - Advanced 60 μm thin 600 V punch-through IGBT concept for extremely low forward voltage and low turn-off loss

Matsudai, T., Nozaki, H., Umekawa, S., Tanaka, M., Kobayashi, M., Hattori, H., Nakagawa, A.
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Year:
2001
Language:
english
DOI:
10.1109/ISPSD.2001.934647
File:
PDF, 313 KB
english, 2001
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