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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
Muller, J., Yurchuk, E., Schlosser, T., Paul, J., Hoffmann, R., Muller, S., Martin, D., Slesazeck, S., Polakowski, P., Sundqvist, J., Czernohorsky, M., Seidel, K., Kucher, P., Boschke, R., Trentzsch,Year:
2012
Language:
english
DOI:
10.1109/VLSIT.2012.6242443
File:
PDF, 760 KB
english, 2012