![](/img/cover-not-exists.png)
[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - The evolution of the HfSiOx/Si interface along with the increase of forming gas annealing temperature
Yang, Wen, Geng, Yang, Fang, Run-chen, Sun, Qing-Qing, Lu, Hong-liang, Zhou, Peng, Zhang, David WeiYear:
2012
Language:
english
DOI:
10.1109/ICSICT.2012.6467832
File:
PDF, 522 KB
english, 2012