[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Interface-trap modeling for silicon-nanowire MOSFETs
Chen, Zuhui, Zhou, Xing, Zhu, Guojun, Lin, ShihuanYear:
2010
Language:
english
DOI:
10.1109/IRPS.2010.5488693
File:
PDF, 370 KB
english, 2010