AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50%...

IEEE Electron Device Letters 2010 / 01 Vol. 31; Iss. 1

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.
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Volume:
31
Language:
english
Pages:
3
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2035145
Date:
January, 2010
File:
PDF, 321 KB
english, 2010
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