Field dependence of interface-trap buildup in polysilicon...

IEEE Transactions on Nuclear Science 1990 / Dec. Vol. 37; Iss. 6

Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices

Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Hughes, K.L., Sexton, F.W.
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Volume:
37
Language:
english
Pages:
9
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.101171
Date:
January, 1990
File:
PDF, 806 KB
english, 1990
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