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Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al 2 O 3 epilayers
Lutsenko, Evgenii V., Rzheutski, Mikalai V., Zubialevich, Vitalii Z., Pavlovskii, Viacheslav N., Yablonskii, Gennadii P., Shulenkov, Alexei S., Reklaitis, Ignas, Kadys, Arūnas, Malinauskas, Tadas, NarVolume:
10
Language:
english
Pages:
4
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201200590
Date:
March, 2013
File:
PDF, 446 KB
english, 2013