Growth of InSb and InAs1−xSbx on GaAs by molecular beam...

Applied Physics Letters 1988 Vol. 53; Iss. 12

Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy

Chyi, J.-I., Kalem, S., Kumar, N. S., Litton, C. W., Morkoç, H.
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Volume:
53
Year:
1988
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.100031
File:
PDF, 613 KB
english, 1988
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