Low temperature electron mobility and concentration under the gate of AlGaNâGaN field effect transistors
Sakowicz, M., Tauk, R., Åusakowski, J., Tiberj, A., Knap, W., Bougrioua, Z., Azize, M., Lorenzini, P., Karpierz, K., Grynberg, M.Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2353786
File:
PDF, 355 KB
english, 2006