[IEEE International Electron Devices Meeting. Technical Digest. IEDM - San Francisco, CA, USA (10-13 Dec. 2000)] International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - A new poly-Si TFT with selectively doped channel fabricated by novel excimer laser annealing
Jae-Hong Jeon,, Min-Cheol Lee,, Kee-Chan Park,, Sang-Hoon Jung,, Min-Koo Han,Year:
2000
Language:
english
DOI:
10.1109/IEDM.2000.904295
File:
PDF, 347 KB
english, 2000