Two-dimensional simulation of submicrometer GaAs MESFETs:...

IEEE Transactions on Electron Devices 1988 / 7 Vol. 35; Iss. 7

Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures

Heliodore, F., Lefebvre, M., Salmer, G., El-Sayed, O.L.
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Volume:
35
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/16.3332
Date:
July, 1988
File:
PDF, 668 KB
english, 1988
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