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Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures
Heliodore, F., Lefebvre, M., Salmer, G., El-Sayed, O.L.Volume:
35
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/16.3332
Date:
July, 1988
File:
PDF, 668 KB
english, 1988