Formation of SiC and Si 3 N 4 in silicon by ion implantation
Edelman, F. L., Kuznetsov, O. N., Lezheiko, L. V., Lubopytova, E. V.Volume:
29
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337577608233477
Date:
January, 1976
File:
PDF, 358 KB
english, 1976