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A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion
Qin, Shengjun, Zhang, Jinyu, Fu, Di, Xie, Dan, Wang, Yan, Qian, He, Liu, Litian, Yu, ZhipingVolume:
4
Year:
2012
Language:
english
Journal:
Nanoscale
DOI:
10.1039/C2NR31180A
File:
PDF, 526 KB
english, 2012