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Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
Krzeminski, C., Brulin, Q., Cuny, V., Lecat, E., Lampin, E., Cleri, F.Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2743089
File:
PDF, 1.99 MB
english, 2007