[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Performance of a trench pmos gated, planar, 1.2 kV Clustered insulated gate bipolar transistor in NPT technology
Luther-King, N., Sweet, M., Sankara Narayanan, E.M.Year:
2009
Language:
english
DOI:
10.1109/ISPSD.2009.5158027
File:
PDF, 357 KB
english, 2009