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Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity
Truyen, D., Boch, J., Sagnes, B., Renaud, N., Leduc, E., Arnal, S., Saigne, F.Volume:
54
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2007.894298
Date:
August, 2007
File:
PDF, 207 KB
english, 2007