Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
Chen, Tron-Min, Wang, Shui-Jinn, Uang, Kai-Ming, Chen, Shiue-Lung, Tsai, Wei-Chih, Lee, Wei-Chi, Tsai, Ching-ChungVolume:
90
Year:
2007
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2432254
File:
PDF, 537 KB
english, 2007