A model for avalanche breakdown calculation in low-voltage...

Semiconductor Science and Technology 2013 / 01 Vol. 28; Iss. 1

A model for avalanche breakdown calculation in low-voltage trench power MOSFET devices

Pace, C, Pierro, S, Cilia, V, Consentino, G
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/1/015007
Date:
January, 2013
File:
PDF, 633 KB
english, 2013
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