An Accurate and Robust Compact Model for High-Voltage MOS...

IEEE Transactions on Electron Devices 2013 / 02 Vol. 60; Iss. 2

An Accurate and Robust Compact Model for High-Voltage MOS IC Simulation

Wang, Wenyuan, Tudor, Bogdan, Xi, Xuemei, Liu, Weidong, Lee, Frank Jyhchwen
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2233740
Date:
February, 2013
File:
PDF, 1.30 MB
english, 2013
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