High-power silicon P–i–N diode with cathode shorts: The...

Microelectronics Reliability 2013 / 5 Vol. 53; Iss. 5

High-power silicon P–i–N diode with cathode shorts: The impact of electron irradiation

Pína, L., Vobecký, J.
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Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.02.008
Date:
May, 2013
File:
PDF, 1.16 MB
english, 2013
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