Atomistic simulations of the implantation of low-energy...

Physical Review B 2011 / 3 Vol. 83; Iss. 11

Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene

Åhlgren, E. H., Kotakoski, J., Krasheninnikov, A. V.
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Volume:
83
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.83.115424
Date:
March, 2011
File:
PDF, 557 KB
english, 2011
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