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High luminescent efficiency of InGaN multiple quantum wells...

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Akasaka, Tetsuya, Gotoh, Hideki, Saito, Tadashi, Makimoto, Toshiki
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Volume:
85
Year:
2004
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1804607
File:
PDF, 327 KB
english, 2004
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