High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
Akasaka, Tetsuya, Gotoh, Hideki, Saito, Tadashi, Makimoto, ToshikiVolume:
85
Year:
2004
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1804607
File:
PDF, 327 KB
english, 2004