Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory
Choi, Woojin, Jang, Kyungsoo, Raja, Jayapal, Cho, Jaehyun, Nguyen, Hong Hanh, Kim, Minbum, Kim, Jiwoong, Lee, YounJung, Nagarajan, Balaji, Yi, JunsinVolume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/3/035014
Date:
March, 2013
File:
PDF, 522 KB
english, 2013