Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy
Morales-Cortés, H, Mejía-García, C, Méndez-García, V H, Vázquez-Cortés, D, Rojas-Ramírez, J S, Contreras-Guerrero, R, Ramírez-López, M, Martínez-Velis, I, López-López, MVolume:
21
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/21/13/134012
Date:
April, 2010
File:
PDF, 1.86 MB
english, 2010