[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs
Lagger, Peter, Ostermaier, Clemens, Pobegen, Gregor, Pogany, DionyzYear:
2012
Language:
english
DOI:
10.1109/IEDM.2012.6479033
File:
PDF, 878 KB
english, 2012