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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

Lagger, Peter, Ostermaier, Clemens, Pobegen, Gregor, Pogany, Dionyz
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Year:
2012
Language:
english
DOI:
10.1109/IEDM.2012.6479033
File:
PDF, 878 KB
english, 2012
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