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[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias
Abimael, Jimenez-P., Ambrosio, Roberto C. L., Carlos, A. P. Martinez, Karim, Monfil-L., Jose, A. Munoz-G., Zurika, I. Blanco-G.Year:
2011
Language:
english
DOI:
10.1109/ISDRS.2011.6135370
File:
PDF, 1.61 MB
english, 2011