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A 210 GHz Dual-Gate FET Mixer MMIC With ${>}$2 dB Conversion Gain, High LO-to-RF Isolation, and Low LO-Drive Requirements
Kallfass, I., Massler, H., Leuther, A., Tessmann, A., Schlechtweg, M.Volume:
18
Language:
english
Journal:
IEEE Microwave and Wireless Components Letters
DOI:
10.1109/LMWC.2008.2001022
Date:
August, 2008
File:
PDF, 342 KB
english, 2008