Channel Strain Measurement in 32-nm-Node Complementary...

Japanese Journal of Applied Physics 2012 / 4 Vol. 51

Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy

Takei, Munehisa, Hashiguchi, Hiroki, Yamaguchi, Takuya, Kosemura, Daisuke, Nagata, Kohki, Ogura, Atsushi
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.04DA04
Date:
April, 2012
File:
PDF, 793 KB
english, 2012
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