Infrared photoluminescence of InAs epilayers grown on GaAs...

Journal of Applied Physics 1989 Vol. 65; Iss. 10

Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Grober, Robert D., Drew, H. D., Chyi, Jen-Inn, Kalem, S., Morkoç, H.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343339
File:
PDF, 491 KB
english, 1989
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