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[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources
Zhang, Zhen, Pagette, F., D'Emic, C., Yang, B., Lavoie, C., Ray, A., Zhu, Y., Hopstaken, M., Maurer, S., Murray, C., Guillorn, M., Klaus, D., Bucchignano, J. J., Bruley, J., Ott, J., Pyzyna, A., NewbuYear:
2010
Language:
english
DOI:
10.1109/VTSA.2010.5488908
File:
PDF, 893 KB
english, 2010