Inversion layer carrier concentration and mobility in 4HâSiC metal-oxide-semiconductor field-effect transistors
Dhar, S., Haney, S., Cheng, L., Ryu, S.-R., Agarwal, A. K., Yu, L. C., Cheung, K. P.Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3484043
File:
PDF, 619 KB
english, 2010