Inversion layer carrier concentration and mobility in...

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

Dhar, S., Haney, S., Cheng, L., Ryu, S.-R., Agarwal, A. K., Yu, L. C., Cheung, K. P.
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Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3484043
File:
PDF, 619 KB
english, 2010
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