Degradation mechanism of the AlInAs/GaInAs high electron...

Applied Physics Letters 1996 Vol. 69; Iss. 26

Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation

Hayafuji, N., Yamamoto, Y., Ishida, T., Sato, K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
69
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.117823
File:
PDF, 347 KB
english, 1996
Conversion to is in progress
Conversion to is failed