AlGaN Channel HEMT With Extremely High Breakdown Voltage

IEEE Transactions on Electron Devices 2013 / 03 Vol. 60; Iss. 3

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Nanjo, Takuma, Imai, Akifumi, Suzuki, Yosuke, Abe, Yuji, Oishi, Toshiyuki, Suita, Muneyoshi, Yagyu, Eiji, Tokuda, Yasunori
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2012.2233742
Date:
March, 2013
File:
PDF, 802 KB
english, 2013
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