Influence of an Atom in EGaIn/Ga 2...

The Journal of Physical Chemistry C 2013 / 05 Vol. 117; Iss. 21

Influence of an Atom in EGaIn/Ga 2 O 3 Tunneling Junctions Comprising Self-Assembled Monolayers

Fracasso, Davide, Muglali, Mutlu Iskender, Rohwerder, Michael, Terfort, Andreas, Chiechi, Ryan C.
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Volume:
117
Language:
english
Journal:
The Journal of Physical Chemistry C
DOI:
10.1021/jp401703p
Date:
May, 2013
File:
PDF, 941 KB
english, 2013
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