Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer
Huang, Xiaoming, Wu, Chenfei, Lu, Hai, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, YoudouVolume:
102
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4805354
File:
PDF, 962 KB
english, 2013