Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies
Shevchenko, E. A., Jmerik, V. N., Mizerov, A. M., Sitnikova, A. A., Ivanov, S. V., Toropov, A. A.Volume:
46
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782612080192
Date:
August, 2012
File:
PDF, 314 KB
english, 2012