Ab initio study of substitutional impurity atoms in 4H-SiC

Ab initio study of substitutional impurity atoms in 4H-SiC

Miyata, Masanori, Higashiguchi, Yoshitsune, Hayafuji, Yoshinori
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Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3041650
File:
PDF, 365 KB
english, 2008
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