Atomic structure and defect densities in low dielectric...

Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition

Ligatchev, V., Wong, T. K. S., Liu, B., Rusli,
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Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1507811
File:
PDF, 376 KB
english, 2002
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