Atomic structure and defect densities in low dielectric constant carbon doped hydrogenated silicon oxide films, deposited by plasma-enhanced chemical vapor deposition
Ligatchev, V., Wong, T. K. S., Liu, B., Rusli,Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1507811
File:
PDF, 376 KB
english, 2002