Atomic behavior of carbon atoms on a Si removed 3C-SiC...

Journal of Applied Physics 2012 Vol. 111; Iss. 10

Atomic behavior of carbon atoms on a Si removed 3C-SiC (111) surface during the early stage of epitaxial graphene growth

Hwang, Yubin, Lee, Eung-Kwan, Choi, Heechae, Yun, Kyung-Han, Lee, Minho, Chung, Yong-Chae
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Volume:
111
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4722994
File:
PDF, 2.99 MB
english, 2012
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