Hole injection and efficiency droop improvement in...

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

Wang, C. H., Ke, C. C., Lee, C. Y., Chang, S. P., Chang, W. T., Li, J. C., Li, Z. Y., Yang, H. C., Kuo, H. C., Lu, T. C., Wang, S. C.

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Volume:

Year:

2010

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.3531753

File:

PDF, 763 KB

english, 2010

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