Investigation of AlInN barrier ISFET structures with GaN...

Sensors and Actuators B: Chemical 2013 / 01 Vol. 176

Investigation of AlInN barrier ISFET structures with GaN capping for pH detection

Brazzini, T., Bengoechea-Encabo, A., Sánchez-García, M.A., Calle, F.
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Volume:
176
Language:
english
Journal:
Sensors and Actuators B: Chemical
DOI:
10.1016/j.snb.2012.09.109
Date:
January, 2013
File:
PDF, 505 KB
english, 2013
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