Diode-MTJ Crossbar Memory Cell Using Voltage-Induced...

IEEE Electron Device Letters 2013 / 06 Vol. 34; Iss. 6

Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM

Dorrance, Richard, Alzate, Juan G., Cherepov, Sergiy S., Upadhyaya, Pramey, Krivorotov, Ilya N., Katine, Jordan A., Langer, Juergen, Wang, Kang L., Amiri, Pedram Khalili, Markovic, Dejan
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2255096
Date:
June, 2013
File:
PDF, 530 KB
english, 2013
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