Improved Growth Behavior of Atomic-Layer-Deposited High-...

ACS Applied Materials & Interfaces 2013 / 06 Vol. 5; Iss. 11

Improved Growth Behavior of Atomic-Layer-Deposited High- k Dielectrics on Multilayer MoS 2 by Oxygen Plasma Pretreatment

Yang, Jaehyun, Kim, Sunkook, Choi, Woong, Park, Sang Han, Jung, Youngkwon, Cho, Mann-Ho, Kim, Hyoungsub
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Volume:
5
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am303261c
Date:
June, 2013
File:
PDF, 1.03 MB
english, 2013
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