Characteristics and the Model of Resistive Random Access...

Japanese Journal of Applied Physics 2011 / 4 Vol. 50; Iss. 4

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DD14
Date:
April, 2011
File:
PDF, 726 KB
english, 2011
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