Fabrication of 150-nm Al0.48In0.52As/Ga0.47In0.53As mHEMTs...

SCIENCE CHINA Physics, Mechanics & Astronomy 2012 / 12 Vol. 55; Iss. 12

Fabrication of 150-nm Al0.48In0.52As/Ga0.47In0.53As mHEMTs on GaAs substrates

Wu, XiaoFeng, Liu, HongXia, Li, HaiOu, Li, Qi, Hu, ShiGang, Xi, ZaiFang, Zhao, Jin
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Volume:
55
Language:
english
Journal:
Science China Physics, Mechanics and Astronomy
DOI:
10.1007/s11433-012-4910-7
Date:
December, 2012
File:
PDF, 504 KB
english, 2012
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